VBUS052BD-HTF www.vishay.com vishay semiconductors rev. 1.7, 03-may-17 1 document number: 81788 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 low capacitance, 2-line esd protection diode marking (example only) dot = pin 1 marking ? yy = type code (see table below) ? xx = date code design support tools click logo to get started features ? compact llp75-4l package ? low package height < 0.6 mm ? 2-line esd protection ? low leakage current < 0.1 a ? low load capacitance c d = 1.5 pf ? esd immunity acc. iec 61000-4-2 ? 15 kv contact discharge ? 15 kv air discharge ? high surge current acc. iec 61000-4-5 l pp > 3 a ? soldering can be checked by standard vision inspection. no x-ray necessary ? e4 - precious metal (e.g. ag, au, nipd, nipdau) (no sn) ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? ? 20903 1 20904 1 2 3 4 21001 xx yy available model s ordering information device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VBUS052BD-HTF VBUS052BD-HTF-gs08 3000 15 000 package data device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VBUS052BD-HTF llp75-4l u7 4.2 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings VBUS052BD-HTF rating test conditions symbol value unit peak pulse current acc. iec 61000-4-5, t p = 8/20 s/single shot i ppm 3a peak pulse power acc. iec 61000-4-5, t p = 8/20 s/single shot p pp 45 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 15 kv air discharge acc. iec 61000-4-2; 10 pulses 15 kv operating temperature junction temperature t j -40 to +125 c storage temperature t stg -40 to +150 c
VBUS052BD-HTF www.vishay.com vishay semiconductors rev. 1.7, 03-may-17 2 document number: 81788 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 application note the VBUS052BD-HTF is a two-line esd protection device with the characteristic of a z-diode with a high esd immunity and a very low capacitance which makes it usable for hi gh frequency applications like usb2.0 or hdmi. ? with the VBUS052BD-HTF two high speed data lines can be protected against transient voltage signals like esd (electro static discharge). connected to the data line (pin 1 and 2) and to ground (pin 3) negative transients will be clamped close below the ground level while positive transients will be clamped close above the 5 v workin g range. the clamping behavior of the VBUS052BD-HTF is bidirectional but asymmetri cal (bias) and so it offers the best prote ction for applications running up to 5 v. note ? ratings at 25 c, ambient temperature unless otherwise specified typical characteristics t amb = 25 c, unless ot herwise specified fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 ? /150 pf) fig. 2 - 8/20 s peak pulse current wave form acc. iec 61000-4-5 fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical forward current i f vs. forward voltage v f electrical characteristics VBUS052BD-HTF parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel - - 2 lines reverse stand-off voltage at i r = 0.1 a; pin 1 or pin 2 to pin 3 v rwm --5v reverse current at v r = v rwm = 5 v; pin 1 or pin 2 to pin 3 i r - < 0.01 0.1 a reverse breakdown voltage at i r = 1 ma; pin 1 or pin 2 to pin 3 v br 6.9 7.9 8.7 v reverse clamping voltage at i pp = 3 a, acc. iec 61000-4-5; pin 1 or pin 2 to pin 3 v c --16v forward clamping voltage at i f = 3 a, acc. iec 61000-4-5; pin 3 to pin 1 or pin 2 v f -4.86 v capacitance at v r = 0 v; f = 1 mhz; pin 1 or pin 2 to pin 3 c d -1.52.5pf 0 % 20 % 40 % 60 % 80 % 100 % 120 % -10 0 102030405060708090100 time (ns) discharge current i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 80 % 100 % 010203040 time (s) i ppm 20 s to 50 % 8 s to 100 % 20548 0.0 0.5 1.5 2.0 2.5 0123456 v in (v) c in (pf) 20942 f = 1 mhz 1.0 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v f (v) i f (ma) 20943
VBUS052BD-HTF www.vishay.com vishay semiconductors rev. 1.7, 03-may-17 3 document number: 81788 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse voltage v r vs. reverse current i r fig. 6 - typical clamping voltage vs. peak pulse current i pp fig. 7 - typical clamping performance at + 8 kv contact discharge (acc. iec 61000-4-2) fig. 8 - typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) fig. 9 - typical peak clamping voltage at esd contact discharge (acc. iec 61000-4-2) 0 1 2 3 4 5 6 7 8 9 0.01 0.1 1 10 100 1000 10 000 i r (a) v r (v) 20944 - 10 - 5 0 5 10 15 20 01234 i pp (a) v c (v) 20945 v c positive surge negative surge measured acc. iec 61000-4-5 (8/20 s - wave form) - 20 0 20 40 60 80 100 120 - 10 0 102030405060708090 acc. iec 61000-4-2 + 8 kv contact discharge t (ns) v c-esd (v) 20946 - 160 - 140 - 120 - 100 - 80 - 60 - 40 - 20 0 20 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) v c-esd (v) 20947 acc. iec 61000-4-2 - 8 kv contact discharge - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 0 5 10 15 20 v esd (kv) v c-esd (v) 20948 acc. iec 61000-4-2 contact discharge v c-esd positive discharge negative discharge
VBUS052BD-HTF www.vishay.com vishay semiconductors rev. 1.7, 03-may-17 4 document number: 81788 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): llp75-4l 0.15 (0.006) 1.55 (0.061) 1.65 (0.065) 1.55 (0.061) 1.65 (0.065) 1.05 (0.041) 0.95 (0.037) 0.3 (0.012) 0.2 (0.008) pin 1 marking 0.05 (0.002) 0 (0.000) 0.25 (0.010) 0.3 (0.012) 1 (0.039) 0.5 (0.020) 0.5 (0.020) 0.15 (0.006) 0.3 (0.012) 0.15 (0.006) solder resist mask solder pad 0.6 (0.024) 0.5 (0.020) 0.3 (0.012) 0.2 (0.008) 0.55 (0.022) 0.45 (0.018) 0.5 (0.020) document no.:s8-v-3906.02-015 (4) foot print recommendation: rev. 2 - date: 09. sep. 2008 20906 created - date: 04. september 2007
VBUS052BD-HTF www.vishay.com vishay semiconductors rev. 1.7, 03-may-17 5 document number: 81788 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 s 9 a g unreeling direction pin 1 - location pad layout - view from top / s een at bottom s ide llp75-4l
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